Background Articles |
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1. |
"Essential
physics of carrier transport in nanoscale MOSFETs", M. Lundstrom
and Z. Ren, IEEE Trans. on Electron Devices, vol. 49, pp. 133-141,
2002. (371 KB PDF). |
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2. |
"Parallelization
of the nanoscale device simulator nanoMOS 2.0 using a 100 node Linux
cluster",S. Goasguen, A.R. Butt, K.D. Colby nad M.S.
Lundstrom, IEEE Nanotechnology Conference, Washington DC, Aug 26-28,
2002. (243 KB PDF) |
|
3. |
"A compact
scattering model for the nanoscale double-gate MOSFET", A.
Rahman and M. Lundstrom, IEEE Trans. on Electron Devices, vol. 49, pp.
481-489, 2002. (178 KB PDF). |
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The lectures were delivered by
Prof. Lundstrom and members of his research group at Purdue University,
as detailed below:
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Lecture 1 |
| Mark Lundstrom |
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Presentation - download
(535 KB PDF) |
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Lecture 2 |
| Jung-Hoon Rhew |
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Presentation - download
(675 KB PDF) |
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Lecture 3 |
| Mark Lundstrom |
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Presentation - download
(393 KB PDF) |
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Lecture 4 |
| Ramesh Venugopal |
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Presentation - download
(2.8 MB PDF) |
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Lecture 5 |
| Jing Wang |
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Presentation - download
(204 KB PDF) |
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Lecture 6 |
| Jing Guo |
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Presentation - download
(262 KB PDF) |
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Lecture 7 |
| Sebastien Goasguen |
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Presentation - download
(1.13 MB PDF) |
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Lab Exercises |
| Sebastien Goasguen |
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download
(892 KB PDF) |
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|
| |
download
(1.13 MB PDF) |