Summer School on Computational Materials Science
2002
University of Illinois, Urbana-Champaign

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Theory and Simulation of Nanotransistors

Mark Lundstrom - lundstro@purdue.edu

School of Electrical and Computer Engineering

Purdue University


Outline of Lectures

  1. Physics of Nanoscale Transistors
    1. Introduction
    2. The ballistic MOSFET
    3. Scattering theory of the MOSFET
    4. Beyond the Si MOSFET
  2. nanoMOS: Semiclassical Transport
    1. Introduction
    2. Ballistic Boltzmann Transport equation
    3. Macroscopic models (Drift-Diffusion, Energy Transport)
    4. Benchmark study
    5. Quantum potential approaches
  3. nanoMOS: Quantum Transport
    1. Ballistic quantum transport in 1-D
    2. Ballistic quantum transport in nanoMOS
    3. A quick look at scattering
    4. Quantum transport: the NEGF formalism
  4. Green's function Approach for MOSFETs
    1. Introduction
    2. Ballistic electron transport: Real vs. Mode space
    3. Boundary conditions
    4. Scattering in n-channel MOSFETs
  5. Optimizing 10 nm MOSFETs with nanoMOS
    1. Motivation
    2. Device structure
    3. Device design
    4. Device performance
    5. Discussion
  6. Simulating Carbon Nanotube FETs
    1. Introduction
    2. Gate electrostatics
    3. I-V characteristics
    4. Comparison with Si MOSFET 
  7. Tour of the nanoMOS code
    1. Spirit of nanoMOS
    2. The "big" and the "small" routines
    3. The post/pre-processing routines
    4. The computation routines
    5. How to parallelize a MATLAB application?
    6. How/Where to parallelize nanoMOS?
    7. Where do we go from here?

Double gate nanoscale MOSFET

Spectral density - ballistic case

Spectral density - scattering case


Background Articles

1.

"Essential physics of carrier transport in nanoscale MOSFETs", M. Lundstrom and Z. Ren, IEEE Trans. on Electron Devices, vol. 49, pp. 133-141, 2002. (371 KB PDF).  

2.

"Parallelization of the nanoscale device simulator nanoMOS 2.0 using a 100 node Linux cluster",S. Goasguen, A.R. Butt, K.D. Colby nad M.S. Lundstrom, IEEE Nanotechnology Conference, Washington DC, Aug 26-28, 2002. (243 KB PDF)

3.

"A compact scattering model for the nanoscale double-gate MOSFET", A. Rahman and M. Lundstrom, IEEE Trans. on Electron Devices, vol. 49, pp. 481-489, 2002. (178 KB PDF).  

   

The lectures were delivered by Prof. Lundstrom and members of his research group at Purdue University, as detailed below:

Lecture 1

Mark Lundstrom
  Presentation - download (535 KB PDF)

Lecture 2

Jung-Hoon Rhew
  Presentation - download (675 KB PDF)

Lecture 3

Mark Lundstrom
  Presentation - download (393 KB PDF)

Lecture 4

Ramesh Venugopal
  Presentation - download (2.8 MB PDF)

Lecture 5

Jing Wang
  Presentation - download (204 KB PDF)

Lecture 6

Jing Guo
  Presentation - download (262 KB PDF)

Lecture 7

Sebastien Goasguen
  Presentation - download (1.13 MB PDF)

Lab Exercises

Sebastien Goasguen
  download (892 KB PDF)
  download (1.13 MB PDF)

Last Updated August 16, 2002
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