Outline of Lecture

1. Full Band Monte Carlo
   1. Silicon band structure
   2. Empirical pseudo-potential band structure calculation
   3. Monte Carlo simulation with full band
   4. 3-D parallel simulation of MOSFETs
   5. Simulation of Schottky barrier MOSFETs
2. Time-Dependent Monte Carlo Simulation
   1. 1-D transient simulation - Gunn diode
   2. Multidimensional simulation - MESFET
   3. Approaches for noise analysis
   4. Full-wave simulation of electromagnetics
   5. Simulation of real space transfer devices
3. Statistical Enhancement for Monte Carlo Simulation
   1. Noise in Monte Carlo simulation
   2. Multi-comb method
   3. Enhancement method used in DAMOCLES
   4. Adaptive gather method
   5. Comparisons of the approaches

Background Articles

1.

"Full-Band Monte Carlo Investigation of Hot Carrier Trends in the Scaling of MOSFETs", A. Duncan, U. Ravaioli, and J. Jakumeit, IEEE Trans Electron Dev., vol. 45, pp. 867-876, 1998. (169 KB PDF)

2.

"Integration of a Particle-Particle-Particle-Mesh Algorithm with the Ensemble Monte Carlo method for the Simulation of Ultra-Small Semiconductor Devices", C. Wordelman and U. Ravaioli, IEEE Trans Electron Dev., vol. 47, pp. 410-416, 2000. (115 KB PDF)

3.

"Simulation of Schottky Barrier MOSFET's with a Coupled Quantum Injection/Monte Carlo Technique", B. Winstead and U. Ravaioli, IEEE Trans Electron Dev., vol. 47, pp. 1241-1246, 2000. (101 KB PDF)

4.

"Ananlysis of Variance-Reduction Schemes for Ensemble Monte Carlo Simulations of Semiconductor Devices", A. Pacelli and U. Ravaioli, Solid-State Electronics, vol. 41, pp. 599-605, 1997. (542 KB PDF)

Lecture 1

Lecture 2

Lecture 3

Lab Exercises